isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High DC Current Gain: hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA) ·Complement to Type 2SD2082 B APPLICATIONS ·Designed for chopper regulator, DC motor driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -16 A ICM Collector Current-Peak -26 A IB Base Current-Continuous -1 A PC Collector Power Dissipation @TC=25℃ 75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SB1382 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1382 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -16mA -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -8A; IB= -16mA -2.5 V ICBO Collector Cutoff Current VCB= -120V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 mA hFE DC Current Gain IC= -8A ; VCE= -4V COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 350 pF Current-Gain—Bandwidth Product IE= 1A ; VCE= -12V 50 MHz 0.8 μs 1.8 μs 1.0 μs fT CONDITIONS MIN TYP. MAX -120 UNIT V B B 2000 Switching Times ton Turn-on Time tstg Storage Time tf VCC= -40V, RL= 5Ω, IC= -8A; IB1= -IB2= -16mA, Fall Time isc Website：www.iscsemi.cn 2