ISC 2SD1492

Inchange Semiconductor
Product Specification
2SD1492
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High voltage ,high reliability
·Wide area of safe operation
APPLICATIONS
·High voltage power switching TV horizontal
deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
6
V
1.5
A
50
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-45~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1492
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; RBE=∞
VCEsat
Collector-emitter saturation voltage
IC=1.2A; IB=0.3A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=1.2A; IB=0.3A
1.5
V
ICEX
Collector cut-off current
VCE=1500V; VBE=1.5V
1.0
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
1.0
mA
hFE
DC current gain
IC=0.3A ; VCE=5V
2
6
V
600
V
10
30
Inchange Semiconductor
Product Specification
2SD1492
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3