ISC 2SD1402

Inchange Semiconductor
Product Specification
2SD1402
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High speed switching
·High voltage,high reliability
·Wide area of safe operation
APPLICATIONS
·For CRT horizontal output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
5
A
120
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1402
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.8A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
10
μA
hFE
DC current gain
IC=1A ; VCE=5V
Transition frequency
IC=1A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
800
V
6
V
8
3
MHz
Inchange Semiconductor
Product Specification
2SD1402
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3