Inchange Semiconductor Product Specification 2SC3973B Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High voltage,high speed ・Wide area of safe operation APPLICATIONS ・For high voltage,high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1000 V Collector-emitter voltage Open base 500 V Emitter-base voltage Open collector 8 V A H C IN IC Collector current (DC) 7 A ICM Collector current-Peak 15 A IB Base current (DC) 4 A PC Collector power dissipation Tj Tstg Maximum operating junction temperature Storage temperature Ta=25℃ 2 TC=25℃ 45 W 150 ℃ -55~150 ℃ Inchange Semiconductor Product Specification 2SC3973B Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=1000V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=4A ; VCE=5V 8 体 导 半 固电 EM S E NG A H C IN 2 MIN TYP. MAX 500 V R O T UC D N O IC UNIT Inchange Semiconductor Product Specification 2SC3973B Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3