isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2107 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A Collector Power Dissipation @ TC=25℃ 25 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 2 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2107 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; RBE= ∞ 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA; IE= 0 70 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.2 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 4V 1.0 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 10 μA ICEO Collector Cutoff Current VCE= 60V; RBE= ∞ 10 μA hFE-1 DC Current Gain IC= 1A ; VCE= 4V 60 hFE-2 DC Current Gain IC= 0.1A ; VCE= 4V 35 CONDITIONS B B hFE-1 classifications B C 60-120 100-200 isc Website：www.iscsemi.cn MIN 2 TYP. MAX 200 UNIT