isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1392 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min.) ·Good Linearity of hFE APPLICATIONS ·Designed for low frequency power amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w -70 V -60 V -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A Collector Power Dissipation @ Ta=25℃ 2 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 25 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1392 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA; IE= 0 -70 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.2 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V -1.0 V ICBO Collector Cutoff Current VCB= -50V; IE= 0 -10 μA ICEO Collector Cutoff Current VCE= -50V; RBE= ∞ -10 μA hFE-1 DC Current Gain hFE-2 DC Current Gain CONDITIONS B B n c . i m e s c s .i ww w IC= -1A; VCE= -4V 60 IC= -0.1A; VCE= -4V 35 hFE-1 Classifications B C 60-120 100-200 isc Website：www.iscsemi.cn MIN 2 TYP. MAX 200 UNIT