Inchange Semiconductor Product Specification 2SD1788 Silicon NPN Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor ・DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current ±4 A ICM Collector current-Peak ±6 A IB Base current 0.3 A IBM Base current-Peak 0.5 A PT Total power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 5.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2SD1788 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=1A; IB=2mA 1.5 V Base-emitter saturation voltage IC=1A; IB=2mA 2.0 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA ICEO Collector cut-off current VCE=100V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 5 mA hFE DC current gain IC=1A ; VCE=3V Transition frequency IC=0.4A ; VCE=10V fT CONDITIONS MIN TYP. 1500 30000 20 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=1A;IB1=IB2=2mA, RL=25Ω;VBB2=4V 2 2.0 μs 12 μs 5.0 μs Inchange Semiconductor Product Specification 2SD1788 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3