JMNIC 2SD2095

Product Specification
www.jmnic.com
2SD2095
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3P(H)IS package
・Built-in damper diode
・High voltage ,high speed
・Low collector saturation voltage
APPLICATIONS
・For color TV horizontal output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25℃
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
V
VCBO
Collector-base voltage
Open emitter
1500
VCEO
Collector-emitter voltage
Open base
600
VEBO
Emitter-base voltage
Open collector
5
V
5
A
IC
Collector current
IB
Base current
2.5
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
i
Product Specification
www.jmnic.com
2SD2095
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VEBO
Emitter-base breakdown voltage
IE=200mA , IC=0
VCEsat
Collector-emitter saturation voltage
IC=3.5A; IB=0.8A
VBEsat
Emitter-base saturation voltage
ICBO
hFE
MIN
TYP.
MAX
5
UNIT
V
5.0
V
IC=3.5A; IB=0.8A
1.5
V
Collector cut-off current
VCB=500V; IE=0
10
μA
DC current gain
IC=1A ; VCE=5V
Transition frequency
IC=0.1A ; VCE=10V
COB
Collector output capacitance
VF
fT
tf
3.0
8
3
MHz
IE=0 ; VCB=10V;f=1MHz
105
pF
Diode forward voltage
IF=5A
1.6
2.0
V
Fall time
ICP=3.5A ;IB1(end)=0.8A
0.5
1.0
μs
2
Product Specification
www.jmnic.com
2SD2095
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3