Product Specification www.jmnic.com 2SD2095 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3P(H)IS package ・Built-in damper diode ・High voltage ,high speed ・Low collector saturation voltage APPLICATIONS ・For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL PARAMETER CONDITIONS VALUE UNIT V VCBO Collector-base voltage Open emitter 1500 VCEO Collector-emitter voltage Open base 600 VEBO Emitter-base voltage Open collector 5 V 5 A IC Collector current IB Base current 2.5 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ i Product Specification www.jmnic.com 2SD2095 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VEBO Emitter-base breakdown voltage IE=200mA , IC=0 VCEsat Collector-emitter saturation voltage IC=3.5A; IB=0.8A VBEsat Emitter-base saturation voltage ICBO hFE MIN TYP. MAX 5 UNIT V 5.0 V IC=3.5A; IB=0.8A 1.5 V Collector cut-off current VCB=500V; IE=0 10 μA DC current gain IC=1A ; VCE=5V Transition frequency IC=0.1A ; VCE=10V COB Collector output capacitance VF fT tf 3.0 8 3 MHz IE=0 ; VCB=10V;f=1MHz 105 pF Diode forward voltage IF=5A 1.6 2.0 V Fall time ICP=3.5A ;IB1(end)=0.8A 0.5 1.0 μs 2 Product Specification www.jmnic.com 2SD2095 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3