isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2549 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) ·Low Collector Saturation Voltgae: VCE(sat)= 0.7V(Max.)@ IC= 3A ·Good Linearity of hFE APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s i . w n c . i m e VALUE UNIT w w 80 V 80 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A Collector Power Dissipation @TC=25℃ 20 PC W Collector Power Dissipation @Ta=25℃ 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2549 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A 0.7 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.8 V ICES Collector Cutoff Current VCE= 70V; VBE= 0 100 μA ICEO Collector Cutoff Current VCE= 70V; IB= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain fT w ton Turn-on Time tstg Storage Time tf n c . i m e s c s .i 70 IC= 3A; VCE= 4V 10 IC= 0.5A; VCE= 10V IC= 1A; IB1= -IB2= 0.1A; VCC= 50V 70-150 120-250 isc Website：www.iscsemi.cn 2 MAX 80 IC= 1A; VCE= 4V hFE-1 Classifications P TYP. UNIT V B Fall Time Q MIN B ww Current-Gain—Bandwidth Product Switching Times CONDITIONS 250 30 MHz 0.5 μs 4.5 μs 0.5 μs