Inchange Semiconductor Product Specification 2SD1880 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High speed ・High breakdown voltage ・High reliability ・Built in damper diode APPLICATIONS ・Color TV horizontal deflection output ・Color display horizontal deflection output. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1500 V Collector-emitter voltage Open base 800 V Emitter-base voltage Open collector 6 V IC Collector current 8 A ICM Collector current-peak 30 A PC Collector power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1880 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 5 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=800V ;IE=0 10 μA IEBO Emitter cut-off current VEB=4V ;IC=0 130 mA ICES Collector cut-off current VCE=1500V 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=6A ; VCE=5V 5 Diode forward voltage IEC=8A Fall time IC=6A;RL=33.3Ω IB1=1.2A IB2=-2.4A;VCC=200V VF tf 800 UNIT V 40 10 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 2 0.1 2 V 0.3 μs Inchange Semiconductor Product Specification 2SD1880 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SD1880 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4