ISC 2SD1880

Inchange Semiconductor
Product Specification
2SD1880
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・High speed
・High breakdown voltage
・High reliability
・Built in damper diode
APPLICATIONS
・Color TV horizontal deflection output
・Color display horizontal deflection output.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
1500
V
Collector-emitter voltage
Open base
800
V
Emitter-base voltage
Open collector
6
V
IC
Collector current
8
A
ICM
Collector current-peak
30
A
PC
Collector power dissipation
70
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1880
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=6A ;IB=1.2A
5
V
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.2A
1.5
V
ICBO
Collector cut-off current
VCB=800V ;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=4V ;IC=0
130
mA
ICES
Collector cut-off current
VCE=1500V
1.0
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=6A ; VCE=5V
5
Diode forward voltage
IEC=8A
Fall time
IC=6A;RL=33.3Ω
IB1=1.2A IB2=-2.4A;VCC=200V
VF
tf
800
UNIT
V
40
10
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
2
0.1
2
V
0.3
μs
Inchange Semiconductor
Product Specification
2SD1880
Silicon NPN Power Transistors
PACKAGE OUTLINE
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SD1880
Silicon NPN Power Transistors
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
4