ISC 2SC4770

Inchange Semiconductor
Product Specification
2SC4770
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・High breakdown voltage, high reliability.
・High speed
APPLICATIONS
・Ultrahigh-definition color display
・Horizontal deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
1500
V
Collector-emitter voltage
Open base
800
V
Emitter-base voltage
Open collector
6
V
IC
Collector current
7
A
ICM
Collector current-peak
16
A
60
W
PC
Collector power dissipation
3
W
TC=25℃
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC4770
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
MAX
UNIT
IC=5A;IB=1.7 A
5
V
Base-emitter saturation voltage
IC=5A;IB=1.7 A
1.5
V
Collector-emitter sustaining voltage
IC=100mA;IB=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
1
mA
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
ICES
Collector cut-off current
VCE=1500V; RBE=0
1
mA
hFE-1
DC current gain
IC=1 A ; VCE=5V
8
hFE-2
DC current gain
IC=5A ; VCE=5V
3
VCEO(SUS)
CONDITIONS
MIN
TYP.
800
V
8
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Switching times
tstg
tf
‹
Storage time
IC=4A;RL=50Ω
IB1=0.8A;- IB2=1.6A
VCC=200V
Fall time
hFE-2 classifications
1
2
3
3-5
4-6
5-8
2
0.1
3.0
μs
0.2
μs
Inchange Semiconductor
Product Specification
2SC4770
Silicon NPN Power Transistors
PACKAGE OUTLINE
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SC4770
Silicon NPN Power Transistors
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
4