Inchange Semiconductor Product Specification 2SD798 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High voltage ・DARLINGTON APPLICATIONS ・With switching and igniter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A IB Base current 1 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD798 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=40mH VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.04A 2.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.04A 2.5 V ICBO Collector cut-off current VCB=600V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.5 mA hFE-1 DC current gain IC=2A ; VCE=2V 1500 hFE-2 DC current gain IC=4A ; VCE=2V 200 COB Collector output capacitance f=1MHz;VCB=50V 300 UNIT V 35 pF 1 μs 8 μs 5 μs Switching times ton Turn-on time tstg Storage time tf IB1=-IB2=0.04A VCC≈100V,RL=25Ω Fall time 2 Inchange Semiconductor Product Specification 2SD798 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3