ISC 2SC3569

Inchange Semiconductor
Product SpecificationI
2SC3569
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
APPLICATIONS
·High speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
2
A
ICM
Collector current-peak
4
A
IB
Base current
1
A
PC
Collector power dissipation
15
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3569
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.5A; IB=0.1A;L=1mH
VCEsat
Collector-emitter saturation voltage
IC=0.5 A;IB=0.1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=0.5 A;IB=0.1A
1.2
V
ICBO
Collector cut-off current
VCB=400V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
20
hFE-2
DC current gain
IC=0.5A ; VCE=5V
10
400
UNIT
V
80
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=0.5A;RL=300Ω
IB1=- IB2=0.1A
VCC=150V
hFE-1 classifications
R
O
Y
20-40
30-60
40-80
2
1.0
μs
2.5
μs
1.0
μs
Inchange Semiconductor
Product Specification
2SC3569
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3