ISC 2SB757

Inchange Semiconductor
Product Specification
2SB757
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3PN package
・High collector current
・Wide area of safe operation
・Complement to type 2SD847
APPLICATIONS
・Audio amplifications
・Serie regulators
・General purpose power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-40
V
VCEO
Collector-emitter voltage
Open base
-40
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-15
A
IB
Base current
-5
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
VALUE
UNIT
1.56
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
2SB757
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=-0.1mA; IE=0
-40
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
-40
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-0.1mA; IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-0.8
V
VBEsat
Base-emitter on voltage
IC=-5A; IB=-0.5A
-1.8
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100
μA
hFE
DC current gain
IC=-5A ; VCE=-2V
40
240
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-15A;IB1=-IB2=-1.5A
RL=2Ω;PW=20μs,Duty≤2%
2
1.0
μs
2.0
μs
1.0
μs
Inchange Semiconductor
Product Specification
2SB757
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3