ISC 2SD849

Inchange Semiconductor
Product Specification
2SD849
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3 package
・High voltage ,high speed
APPLICATIONS
・Line-operated horizontal deflection
output applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
3
A
ICM
Collector current-peak
5
A
PT
Total power dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=90℃
Inchange Semiconductor
Product Specification
2SD849
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
600
V
V(BR)EBO
Emitter-base breakdown votage
IE=10mA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=3 A;IB=1A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=3 A;IB=1A
1.5
V
VCB=750V;IE=0
0.1
VCB=1500V;IE=0
1.0
ICBO
CONDITIONS
MIN
TYP.
MAX
mA
Collector cut-off current
hFE-1
DC current gain
IC=0.5A ; VCE=5V
8
hFE-2
DC current gain
IC=3A ; VCE=10V
4
tf
Fall time
ts
Storage time
UNIT
12
0.9
μs
IC=3 A;IBend=1A;LB=20μH
13
2
μs
Inchange Semiconductor
Product Specification
2SD849
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3