Inchange Semiconductor Product Specification 2SD849 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・Line-operated horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3 A ICM Collector current-peak 5 A PT Total power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=90℃ Inchange Semiconductor Product Specification 2SD849 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 600 V V(BR)EBO Emitter-base breakdown votage IE=10mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=3 A;IB=1A 5.0 V VBEsat Base-emitter saturation voltage IC=3 A;IB=1A 1.5 V VCB=750V;IE=0 0.1 VCB=1500V;IE=0 1.0 ICBO CONDITIONS MIN TYP. MAX mA Collector cut-off current hFE-1 DC current gain IC=0.5A ; VCE=5V 8 hFE-2 DC current gain IC=3A ; VCE=10V 4 tf Fall time ts Storage time UNIT 12 0.9 μs IC=3 A;IBend=1A;LB=20μH 13 2 μs Inchange Semiconductor Product Specification 2SD849 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3