isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High Voltage: VCBO= 330V(Min) ·Low Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage 330 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current 2 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn BU807FI isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BU807FI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 50mA 2.4 V ICES Collector Cutoff Current VCE= 330V; VBE= 0 0.1 mA ICEV Collector Cutoff Current VCE= 330V; VBE(off)= 6V 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 3.0 mA VECF C-E Diode Forward Voltage IF= 4A 2.0 V isc Website：www.iscsemi.cn CONDITIONS B B 2 MIN TYP. MAX 150 UNIT V