Inchange Semiconductor Product Specification 3DD7D Silicon NPN Power Transistors · DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·power amplifier ·Low-speed switching ·Power regulator PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolut maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 5 V 7.5 A 75 W IC Collector current PC Collector power dissipation Tj Junction temperature -55~175 ℃ Tstg Storage temperature -55~175 ℃ MAX UNIT 1.33 ℃/W TC=75℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 3DD7D Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=3mA ; IB=0 200 V V(BR)CBO Collector-base breakdown voltage IC=3mA ; IE=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=2mA ; IC=0 5 V VCE(sat) Collector-emitter saturation voltage IC=3.75A ;IB=0.38 A 1.2 V ICEO Collector cut-off current VCE=30V; IB=0 1.0 mA hFE DC current gain IC=3.75A ; VCE=10V CONDITIONS hFE classifications 红 橙 黄 绿 蓝 紫 15-25 25-40 40-55 55-80 80-120 120-180 2 MIN 15 TYP. MAX 180 UNIT Inchange Semiconductor Product Specification 3DD7D Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3