ISC 2N3448

Inchange Semiconductor
Product Specification
2N3448
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Excellent Safe Operating Area
APPLICATIONS
·Designed for medium-switching
and amplifier applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
7.5
A
115
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.17
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
R(th) jc
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N3448
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA ;IB=0
VCE(sat)-1
Collector-emitter saturation voltage
IC=5A IB=0.5A
1.2
V
VCE(sat)-2
Collector-emitter saturation voltage
IC=7A IB=1.5A
3.0
V
VBE(on)
Base-emitter on voltage
IC=5A ; VCE=5V
1.8
V
ICEO
Collector cut-off current
VCE=80V; IB=0
0.7
mA
ICBO
Collector cut-off current
VCB=100V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=5A ; VCE=5V
Transition frequency
IC=0.5A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
MAX
100
UNIT
V
50
120
10
MHz
Inchange Semiconductor
Product Specification
2N3448
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3