Inchange Semiconductor Product Specification KSA1614 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Collector-base voltage: VCBO=-80V ·Collector dissipation: PC=20W(TC=25℃) APPLICATIONS ·Power regulator ·Low frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -55 V VEBO Emitter-base voltage Open collector -5 V -3 A 20 W IC Collector current PC Collector dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification KSA1614 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 -55 V V(BR)CBO Collector-base breakdown voltage IC=-500μA ; IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-500μA ; IC=0 -5 V Collector-emitter saturation voltage IC=-1A ;IB=-0.1A ICBO Collector cut-off current VCB=-50V; IE=0 hFE DC current gain IC=-0.5A ; VCE=-5V VCEsat CONDITIONS B O Y 40-80 70-140 120-240 2 TYP. -0.15 B hFE Classifications R MIN 40 MAX UNIT -0.5 V -50 μA 240 Inchange Semiconductor Product Specification KSA1614 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3