isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD943F/945F/947F DESCRIPTION ·DC Current Gain: hFE= 85(Min)@ IC= 500mA ·Complement to Type BD944F/946F/948F APPLICATIONS ·Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BD943F 22 BD945F 32 BD947F 45 BD943F 22 BD945F 32 BD947F 45 UNIT V V Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 22 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 7.93 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD943F/945F/947F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD943F VCEO(SUS) Collector-Emitter Sustaining Voltage BD945F VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage ICEO IC= 100mA ; IB= 0 45 0.5 BD947F IC= 3A; IB= 0.3A 0.7 BD943F/945F IC= 2A; VCE= 1V 1.1 B V B V IC= 3A; VCE= 1V 1.3 VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150℃ 0.05 1 mA 0.1 mA 0.2 mA BD943F VCE= 15V; IB= 0 BD945F VCE= 20V; IB= 0 BD947F VCE= 25V; IB= 0 B B B IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 10mA ; VCE= 5V 25 hFE-2 DC Current Gain IC= 500mA ; VCE= 1V 85 BD943F/945F hFE-3 DC Current Gain fT 475 50 IC= 2A ; VCE= 1V BD947F hFE-4 UNIT V 32 IC= 2A; IB= 0.2A Collector Cutoff Current Collector Cutoff Current MAX BD943F/945F BD947F ICBO TYP. 22 BD947F VCE(sat) MIN 40 DC Current Gain--Only For BD947F IC= 3A ; VCE= 1V 30 Current-Gain—Bandwidth Product IC= 250mA ; VCE= 1V 3 isc Website：www.iscsemi.cn 2 MHz