isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDW74/A/B/C/D DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 750(Min.)@ IC= -3A ·Complement to Type BDW73/A/B/C/D APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage VALUE BDW74 -45 BDW74A -60 BDW74B -80 BDW74C -100 n c . i m e V s c s i . w BDW74D -120 BDW74 -45 w w Collector-Emitter Voltage UNIT BDW74A -60 BDW74B -80 BDW74C -100 BDW74D -120 V Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous -0.3 A PC Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ B TJ Tstg Junction Temperature Storage Temperature Range 2 W 80 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.56 ℃/W Rth j-c Thermal Resistance, Junction to Case 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDW74/A/B/C/D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-Emitter Breakdown Voltage CONDITIONS MIN BDW74 -45 BDW74A -60 IC= -30mA; IB= 0 BDW74B TYP. MAX V -80 BDW74C -100 BDW74D -120 UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA -2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA -4.0 V Base-Emitter On Voltage IC= -3A; VCE= -3V -2.5 V C-E Diode Forward Voltage IF= -8A -3.5 V -0.5 mA VCB= -45V; IE= 0 VCB= -45V; IE= 0; TJ= 150℃ VCB= -60V; IE= 0 VCB= -60V; IE= 0; TJ= 150℃ VCB= -80V; IE= 0 VCB= -80V; IE= 0; TJ= 150℃ VCB= -100V; IE= 0 VCB= -100V; IE= 0; TJ= 150℃ VCB= -120V; IE= 0 VCB= -120V; IE= 0; TJ= 150℃ -0.2 -5.0 -0.2 -5.0 -0.2 -5.0 -0.2 -5.0 -0.2 -5.0 mA -2.0 mA VBE(on) VECF B B BDW74A ICEO w w w Collector Cutoff Current BDW74B BDW74C BDW74D BDW74 BDW74A ICBO Collector Cutoff Current BDW74B BDW74C BDW74D n c . i m e s c s .i BDW74 VCE= -30V; IB= 0 B VCE= -30V; IB= 0 B VCE= -40V; IB= 0 B VCE= -50V; IB= 0 B VCE= -60V; IB= 0 B IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -3A; VCE= -3V 750 hFE-2 DC Current Gain IC= -8A; VCE= -3V 100 20000 Switching times ton Turn-on Time toff Turn-off Time isc Website：www.iscsemi.cn IC= -3A; IB1= -IB2= -12mA; VBE(off)= 3.5V, RL=10Ω 2 1.0 μs 5.0 μs