ISC BD707

Inchange Semiconductor
Product Specification
BD707 BD709 BD711
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220C package
・The BD707 and BD711are respectively
complement to type BD708 and BD712
APPLICATIONS
・Intented for use in power linear
and switching applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
体
半导
Absolute maximum ratings(Ta=25℃)
SYMBOL
固电
VCBO
PARAMETER
Collector-base voltage
BD707
BD709
D
N
O
IC
Open emitter
M
E
S
E
BD711
G
N
A
CH
BD707
VCEO
VEBO
Collector-emitter voltage
IN
R
O
T
UC
CONDITIONS
BD709
Open base
BD711
Emitter-base voltage
VALUE
UNIT
60
80
100
V
60
80
100
Open collector
5
V
IC
Collector current-DC
12
A
ICM
Collector current-Pulse
18
A
IB
Base current
5
A
PT
Total dissipation
75
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
1.67
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
BD707 BD709 BD711
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD707
VCEO(SUS)
Collector-emitter
sustaining voltage
BD709
VBE
IC=0.1A, IB=0
100
V
Base-emitter voltage
IC=4A , VCE=4V
1.5
V
VCB=60V, IE=0
TC=150℃
VCB=80V, IE=0
TC=150℃
VCB=100V, IE=0
TC=150℃
0.1
1.0
0.1
1.0
0.1
1.0
mA
Collector cut-off current
BD709
BD707
VCE=30V, IB=0
BD709
VCE=40V, IB=0
BD711
VCE=50V, IB=0
体
半导
固电
Collector cut-off current
Emitter cut-off current
hFE-1
DC current gain
hFE-2
hFE-3
N
A
H
INC
R
O
T
UC
D
N
O
IC
M
E
S
GE
VEB=5V; IC=0
IC=0.5A ; VCE=2V
40
DC current gain only for BD707/709
IC=2A ; VCE=2V
30
DC current gain
IC=4A ; VCE=2V
15
BD707
DC current gain
BD709
5
IC=10A ; VCE=4V
Transition frequency
120
0.1
mA
1.0
mA
400
150
10
8
BD711
fT
V
80
1.0
IEBO
hFE-4
UNIT
IC=4A ,IB=0.4A
BD711
ICEO
MAX
Collector-emitter saturation voltage
BD707
ICBO
TYP.
60
BD711
VCEsat
MIN
8
IC=0.3A;VCE=3V;
2
3
MHz
Inchange Semiconductor
Product Specification
BD707 BD709 BD711
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
M
E
S
GE
N
A
H
INC
R
O
T
UC
Fig.2 Outline dimensions
3