Inchange Semiconductor Product Specification BD675A/677A/679A/681 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD676A/678A/680A/682 ・DARLINGTON APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS BD675A Collector-base voltage 60 Open emitter VEBO 80 BD681 100 BD675A 45 Collector-emitter voltage Emitter -base voltage V BD679A BD677A VCEO UNIT 45 BD677A VCBO VALUE 60 Open base V BD679A 80 BD681 100 Open collector 5 V IC Collector current 4 A ICM Collector current-Peak 6 A IB Base current 0.1 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BD675A/677A/679A/681 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD675A VCEO(SUS) VCEsat VBE(ON) ICBO ICEO Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current MIN TYP. MAX UNIT 45 BD677A 60 IC=50mA; IB=0 V BD679A 80 BD681 100 BD675A/677A/679A IC=2A; IB=40mA 2.8 BD681 IC=1.5A; IB=30mA 2.5 BD675A/677A/679A IC=2A ; VCE=3V 2.5 BD681 IC=1.5A ; VCE=3V 2.5 BD675A VCB=45V; IE=0 BD677A VCB=60V; IE=0 BD679A VCB=80V; IE=0 BD681 VCB=100V; IE=0 BD675A VCE=45V; VBE=0 BD677A VCE=60V; VBE=0 BD679A VCE=80V; VBE=0 BD681 VCE=100V; VBE=0 V V IEBO Emitter cut-off current hFE DC current gain VEB=5V; IC=0 BD675A/677A/679A IC=2A ; VCE=3V 750 BD681 IC=1.5A ; VCE=3V 750 2 0.2 mA 0.5 mA 2 mA Inchange Semiconductor Product Specification BD675A/677A/679A/681 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3