ISC BDX35

Inchange Semiconductor
Product Specification
BDX35
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-126 package
・High current (Max: 5A)
APPLICATIONS
・High current switching in power
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter -base voltage
Open collector
5
V
IC
Collector current (DC)
5
A
ICM
Collector current-Peak
10
A
IBM
Base current-Peak
2
A
PT
Total power dissipation
15
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
VALUE
UNIT
100
K/W
5
K/W
Tmb≤75℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
Rth j-mb
Thermal resistance from junction to mounting base
Inchange Semiconductor
Product Specification
BDX35
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEsat-1
Collector-emitter saturation voltage
IC=5A; IB=0.5A
0.9
V
VCEsat-2
Collector-emitter saturation voltage
IC=7A; IB=0.7A
1.2
V
VBEsat-1
Base-emitter saturation voltage
IC=5A; IB=0.5A
1.7
V
VBEsat-2
Base-emitter saturation voltage
IC=7A; IB=0.7A
2.0
V
ICBO
Collector cut-off current
VCB=80V; IE=0
Tj=100℃
0.1
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
μA
hFE
DC current gain
IC=0.5A ; VCE=10V
CC
Collector capacitance
IE=0;VCB=10V ;f=1MHz
40
pF
fT
Transition frequency
IC=0.5A; VCE=5V ;f=100MHz
100
MHz
ICon=1A;IBon=-IBoff=0.1A
60
45
450
Switching times
ton
toff
Turn-on time
turn-off time
100
80
ICon=2A;IBon=-IBoff=0.2A
ICon=5A;IBon=-IBoff=0.5A
180
300
ICon=1A;IBon=-IBoff=0.1A
600
800
ICon=2A;IBon=-IBoff=0.2A
450
700
ICon=5A;IBon=-IBoff=0.5A
350
500
2
ns
ns
Inchange Semiconductor
Product Specification
BDX35
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3