Inchange Semiconductor Product Specification BDX35 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High current (Max: 5A) APPLICATIONS ・High current switching in power applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter -base voltage Open collector 5 V IC Collector current (DC) 5 A ICM Collector current-Peak 10 A IBM Base current-Peak 2 A PT Total power dissipation 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 100 K/W 5 K/W Tmb≤75℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal resistance from junction to ambient Rth j-mb Thermal resistance from junction to mounting base Inchange Semiconductor Product Specification BDX35 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=0.5A 0.9 V VCEsat-2 Collector-emitter saturation voltage IC=7A; IB=0.7A 1.2 V VBEsat-1 Base-emitter saturation voltage IC=5A; IB=0.5A 1.7 V VBEsat-2 Base-emitter saturation voltage IC=7A; IB=0.7A 2.0 V ICBO Collector cut-off current VCB=80V; IE=0 Tj=100℃ 0.1 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 μA hFE DC current gain IC=0.5A ; VCE=10V CC Collector capacitance IE=0;VCB=10V ;f=1MHz 40 pF fT Transition frequency IC=0.5A; VCE=5V ;f=100MHz 100 MHz ICon=1A;IBon=-IBoff=0.1A 60 45 450 Switching times ton toff Turn-on time turn-off time 100 80 ICon=2A;IBon=-IBoff=0.2A ICon=5A;IBon=-IBoff=0.5A 180 300 ICon=1A;IBon=-IBoff=0.1A 600 800 ICon=2A;IBon=-IBoff=0.2A 450 700 ICon=5A;IBon=-IBoff=0.5A 350 500 2 ns ns Inchange Semiconductor Product Specification BDX35 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3