Inchange Semiconductor Product Specification 2SC4057 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-247 package ・High voltage;high speed ・Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT 600 V 450 V 7 V Collector current (DC) 8 A Collector current-Peak 16 A 体 导 半 Collector-base voltage 固电 Open emitter Collector-emitter voltage Open base EM S E NG Emitter-base voltage D N O IC R O T UC Open collector IB A H C IN Base current 4 A IBM Base current-Peak 8 A PD Total power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 1.56 ℃/W IC ICM TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2SC4057 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V At rated voltage 0.1 mA 0.1 mA ICBO CONDITIONS MIN IEBO Emitter cut-off current At rated voltage hFE-1 DC current gain IC=4A ; VCE=5V 10 hFE-2 DC current gain IC=1mA ; VCE=5V 5 体 导 半 Transition frequency 固电 tf V A H C IN Turn-on time Storage time IC=4A IB1=0.8A; IB2=1.6A VBB2=4V ,RL=37.5Ω Fall time 2 R O T UC D N O IC IC=0.8A ; VCE=10V EM S E NG Switching times resistive load ts UNIT Collector cut-off current Collector cut-off current ton MAX 450 ICEO fT TYP. 20 MHz 0.5 μs 2.0 μs 0.2 μs Inchange Semiconductor Product Specification 2SC4057 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC