Inchange Semiconductor Product Specification 2SC2373 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Fast switching time APPLICATIONS ・For use in horizontal deflection output for B/W TV applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A ICM Collector current-peak 15 A IB Base current 3.0 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VALUE UNIT 3.125 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2SC2373 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=5A; IB=0.5 A 1.5 V Base-emitter saturation voltage IC=5A; IB=0.5 A 1.5 V VCEO Collector-emitter voltage IC=30mA; IB=0 100 V VEBO Emitter-base voltage IE=1.0mA; IC=0 7 V ICBO Collector cut-off current VCB=150V;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=5A ; VCE=5V 15 fT Transition frequency IC=0.1A ; VCE=5V;f=3.0MHz 5.0 ton Turn-on time ts Storage time tf Fall time VCC=20V;IC=5.0A IB1=-IB2=0.6A PW=20μs hFE classifications M L K 15-35 25-45 35-70 2 MIN TYP. 70 MHz 1.0 μs 2.5 μs 1.0 μs Inchange Semiconductor Product Specification 2SC2373 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC2373 Silicon NPN Power Transistors 4