ISC 2SC2373

Inchange Semiconductor
Product Specification
2SC2373
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・Low collector saturation voltage
・Fast switching time
APPLICATIONS
・For use in horizontal deflection output
for B/W TV applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
7.5
A
ICM
Collector current-peak
15
A
IB
Base current
3.0
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
VALUE
UNIT
3.125
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
2SC2373
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat
Collector-emitter saturation voltage
VBEsat
MAX
UNIT
IC=5A; IB=0.5 A
1.5
V
Base-emitter saturation voltage
IC=5A; IB=0.5 A
1.5
V
VCEO
Collector-emitter voltage
IC=30mA; IB=0
100
V
VEBO
Emitter-base voltage
IE=1.0mA; IC=0
7
V
ICBO
Collector cut-off current
VCB=150V;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE
DC current gain
IC=5A ; VCE=5V
15
fT
Transition frequency
IC=0.1A ; VCE=5V;f=3.0MHz
5.0
ton
Turn-on time
ts
Storage time
tf
Fall time
VCC=20V;IC=5.0A
IB1=-IB2=0.6A
PW=20μs
‹ hFE classifications
M
L
K
15-35
25-45
35-70
2
MIN
TYP.
70
MHz
1.0
μs
2.5
μs
1.0
μs
Inchange Semiconductor
Product Specification
2SC2373
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SC2373
Silicon NPN Power Transistors
4