Inchange Semiconductor Product Specification BUW12 BUW12A Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage,fast speed ・Low collector saturation voltage APPLICATIONS ・Specially intended for operating In industrial applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 导体 半 电 Absolute maximum ratings(Ta=25℃) SYMBOL 固 PARAMETER VCBO CONDITIONS C U D ICON BUW12 Collector-base voltage Open emitter BUW12A M E S E BUW12 VCEO G N A CH Collector-emitter voltage IN Open collector V 1000 400 V 450 9 V Collector current 8 A ICM Collector current-peak 20 A IB Base current 4 A PT Total power dissipation 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~175 ℃ MAX UNIT 1.2 ℃/W IC Emitter-base voltage UNIT 850 Open base BUW12A VEBO TOR VALUE TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BUW12 BUW12A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS BUW12 MIN TYP. MAX UNIT 400 IC=0.1A ; IB=0; L=25mH BUW12A V 450 VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 1.5 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.5 V 1.0 mA 10 mA ICES Collector cut-off current BUW12 BUW12A VCE=850V; VBE=0 VCE=1000V; VBE=0 IEBO Emitter cut-off current VEB=9V; IC=0 hFE DC current gain IC=1A ; VCE=5V 导体 半 电 15 R O T UC Switching times resistive load ton 固 D N O IC Turn-on time ts Storage time tf Fall time M E S GE IC=6A ;IB1=-IB2=1.2A VCC=240V N A H INC 2 50 1.0 μs 4.0 μs 0.8 μs Inchange Semiconductor Product Specification BUW12 BUW12A Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3