Inchange Semiconductor Product Specification BDX77 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low saturation voltage ・Complement to type BDX78 ・Wide area of safe operation APPLICATIONS ・For medium power switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter -base voltage Open collector 5 V IC Collector current (DC) 8 A ICM Collector current-Peak 12 A IBM Base current-Peak 3 A PT Total power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 2.08 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BDX77 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=0.2A ;IB=0 80 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 5 V VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.6A 1.5 V Base-emitter saturation voltage IC=6A; IB=0.6A 2.0 V ICEO Collector cut-off current VCE=30V ;IB=0; 0.2 mA ICBO Collector cut-off current VCB=40V ;IE=0;Tj=150℃ 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.5 mA hFE DC current gain IC=1A ; VCE=2V 30 Transition frequency IC=0.3A ; VCE=3V 7.0 Base-emitter on voltage IC=3A;VCE=2V VBEsat fT VBE CONDITIONS MIN TYP. MAX UNIT MHz 1.5 V 1.0 μs 4.0 μs Switching times ton Turn-on time toff Turn-off time IC=2A IB1=-IB2=0.2A; 2 Inchange Semiconductor Product Specification BDX77 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3