ISC BDX77

Inchange Semiconductor
Product Specification
BDX77
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Low saturation voltage
・Complement to type BDX78
・Wide area of safe operation
APPLICATIONS
・For medium power switching and
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter -base voltage
Open collector
5
V
IC
Collector current (DC)
8
A
ICM
Collector current-Peak
12
A
IBM
Base current-Peak
3
A
PT
Total power dissipation
60
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
2.08
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
BDX77
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=0.2A ;IB=0
80
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
5
V
VCEsat-1
Collector-emitter saturation voltage
IC=3A; IB=0.3A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=6A; IB=0.6A
1.5
V
Base-emitter saturation voltage
IC=6A; IB=0.6A
2.0
V
ICEO
Collector cut-off current
VCE=30V ;IB=0;
0.2
mA
ICBO
Collector cut-off current
VCB=40V ;IE=0;Tj=150℃
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.5
mA
hFE
DC current gain
IC=1A ; VCE=2V
30
Transition frequency
IC=0.3A ; VCE=3V
7.0
Base-emitter on voltage
IC=3A;VCE=2V
VBEsat
fT
VBE
CONDITIONS
MIN
TYP.
MAX
UNIT
MHz
1.5
V
1.0
μs
4.0
μs
Switching times
ton
Turn-on time
toff
Turn-off time
IC=2A
IB1=-IB2=0.2A;
2
Inchange Semiconductor
Product Specification
BDX77
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3