isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY90A DESCRIPTION ·High Current Capability ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators and switching control amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEX Collector-Emitter Voltage(VEB= 0) 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 2 A IBM Base Current-Peak 3 A IE Emitter Current-Continuous -15 A IEM Emitter Current-Peak -15 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ MAX UNIT 2.0 ℃/W B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY90A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 1.2A 1.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 12A; IB= 1.2A 1.5 V ICEX Collector Cutoff Current VCE= VCEXmax;VEB= 1.5V VCE= VCEXmax;VEB= 1.5V,TC=150℃ 0.1 3.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 0.1 mA hFE-1 DC Current Gain IC= 1A ; VCE= 2V 35 hFE-2 DC Current Gain IC= 5A ; VCE= 5V 30 hFE-3 DC Current Gain IC= 12A ; VCE= 5V 20 Current Gain-Bandwidth Product IC= 0.5A ; VCE= 5V;ftest= 5MHz fT CONDITIONS MIN TYP. MAX 100 UNIT V B B 120 70 MHz Switching Times ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 5A; IB1= -IB2=0.5A; VCC= 30V 2 0.35 μs 1.3 μs 0.2 μs