ISC BDY92

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BDY92
DESCRIPTION
·High DC Current Gain: hFE= [email protected]= 5A
·Excellent Safe Operating Area
·High Current Capability
APPLICATIONS
·Designed for use in switching-control amplifiers, power
gates,switching regulators, converters, and inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEV
Collector-Emitter Voltage VBE= -1.5V
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation
@TC≤25℃
60
W
TJ
Junction Temperature
175
℃
-65~175
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.5
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BDY92
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ;IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
0.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 1A
1.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
1.2
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
1.5
V
ICBO
Collector Cutoff Current
VCB=80V; IE=0
1.0
mA
ICEV
Collector Cutoff Current
VCE=80V;VBE=-1.5V
VCE=80V;VBE=-1.5V;TC=150℃
1.0
3.0
mA
IEBO
Emitter Cutoff current
VEB=6V; IC=0
1.0
mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
30
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
30
hFE-3
DC Current Gain
IC= 10A ; VCE= 5V
20
Current-Gain—Bandwidth Product
IC= 0.5 A;VCE= 5V;ftest = 5MHz
fT
CONDITIONS
MIN
TYP
MAX
80
UNIT
V
B
B
120
70
MHz
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
isc Website:www.iscsemi.cn
IC= 5A; IB1= -IB2= 0.5A,
VCC=30V
0.35
μs
1.3
μs
0.2
μs