isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX41 DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 200V(Min) ·High Current Capability ·Good Linearity of hFE APPLICATIONS ·Designed for high speed, high current, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT Collector-Base Voltage 250 V Collector-Emitter Voltage 200 V VCEX Collector-Emitter Voltage VBE= -2.5V 250 V VCER Collector-Emitter Voltage RBE= 100Ω 240 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @TC=100℃ 120 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ VCBO VCEO(SUS) B PARAMETER THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX41 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0, L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 1A 1.6 V Base-Emitter Saturation Voltage IC= 8A; IB= 1A 2.0 V ICEO Collector Cutoff Current VCE= 160V; IB= 0 1.0 mA ICEX Collector Cutoff Current VCE= 250V; VBE= -1.5V VCE= 250V; VBE= -1.5V; TC= 125℃ 1.0 5.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA hFE-1 DC Current Gain IC= 5A ; VCE= 4V 15 hFE-2 DC Current Gain IC= 8A ; VCE= 4V 8 Current-Gain—Bandwidth Product IC= 1A ; VCE= 15V 8 VBE(sat) fT CONDITIONS MIN TYP. MAX UNIT 200 V 7 V B B B 45 MHz Switching Times; Resistive Laod ton Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 8A ;IB1= -IB2= 1A; VCC= 150V; RC= 18.75Ω 2 0.6 μs 1.5 μs 0.4 μs