ISC 2SD2531

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD2531
DESCRIPTION
·Low Collector Saturation Voltage: VCE(sat)= 1.0 (Max)@ IC= 2.5A
·High Power Dissipation: PC= [email protected] TC= 25℃
APPLICATIONS
·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Continuous
1
A
Collector Power Dissipation
@ Ta=25℃
2
PC
TJ
Tstg
W
Collector Power Dissipation
@ TC=25℃
25
Junction Temperature
150
℃
-55~150
℃
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD2531
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA ; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2.5A; IB= 0.25A
1.0
V
VBE(on)
Base-Emitter On Voltage
IC= 0.5A ; VCE= 5V
1.0
V
ICBO
Collector Cutoff Current
VCB= 60V ; IE= 0
100
μA
IEBO
Emitter Cutoff Current
VEB= 7V ; IC= 0
100
μA
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 5V
100
hFE-2
DC Current Gain
IC= 3A ; VCE= 5V
20
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 5V
3
MHz
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
35
pF
fT
COB
isc Website:www.iscsemi.cn
CONDITIONS
2
MIN
TYP.
MAX
60
UNIT
V
320