Inchange Semiconductor Product Specification BU508D Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ・Built-in damper diode APPLICATIONS ・For use in large screen colour deflection circuits. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 5 A ICM Collector current (Pulse) 8 A IB Base current 2.5 A PC Collector power dissipation 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65-150 ℃ VALUE UNIT 1.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BU508D Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 VCEsat Collector-emitter saturation voltage IC=4.5A; IB=2.0A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A; IB=2.0A 1.5 V hFE DC current gain IC=1A ; VCE=5V ICES Collector cut-off current VCE=1500V; VBE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 300 mA VF Diode forward voltage IF=4.0A 2.0 V fT Transition frequency IC=0.1A ; VCE=5V Cob Collector capacitance IE=0;VCB=10V;f=1MHz ts Storage time 700 UNIT V 8 4 MHz 125 pF 7 μs 1.0 μs IC=4.5A ; IB=1.4A LB=10μH tf Fall time 2 Inchange Semiconductor Product Specification BU508D Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3