isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU603 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 550V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in power supplies and deflection circuits for color receivers and monitors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage-VBE= 0 1350 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 2 A IBM Base Current-Peak 4 A IE Emitter Current-Continuous 7 A IEM Emitter Current-Peak 12 A PC Collector Power Dissipation TC=25℃ 100 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.25 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU603 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.33A 2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.33A 3 V ICES Collector Cutoff Current VCE= VCESmax; VBE= 0 VCE= VCESmax; VBE= 0;TJ= 125℃ 1 2 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1 mA hFE-1 DC Current Gain IC= 10mA ; VCE= 5V 6 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 8 hFE-3 DC Current Gain IC= 2A ; VCE= 2V 6 hFE-4 DC Current Gain IC= 4A ; VCE= 3V 3 0.5 μs 6.0 μs 0.7 μs 550 B B UNIT V Switching Times; Resistive Load ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 2A; IB1= -IB2= 0.33A