isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current 2 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 2.08 ℃/W 70 ℃/W BU806 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BU806 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 50mA 2.4 V ICES Collector Cutoff Current VCE= RatedVCBO; VBE= 0 0.1 mA ICEV Collector Cutoff Current VCE= RatedVCEV; VBE(off)= 6V 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 3.0 mA VECF C-E Diode Forward Voltage IF= 4A 2.0 V 200 UNIT V B B Switching Times ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 5A; IB1= 50mA;IB2= -0.5A VCC= 100V 2 0.35 μs 0.55 μs 0.20 μs