Inchange Semiconductor Product Specification BUH715AF Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High voltage,high speed APPLICATIONS ・Horizontal deflection for monitors. ・Switching mode power supplies PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 10 A ICM Collector current (Pulse) 20 A IB Base current (DC) 5 A IBM Base current (Pulse) 10 A Ptot Total power dissipation 57 W 150 ℃ -65~150 ℃ MAX UNIT 2.2 ℃/W Tj Tstg TC=25℃ Operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BUH715AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 10 V VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.5A 1.5 V VBEsat Base-emitter saturation voltage IC=7A ;IB=1.5A 1.3 V ICES Collector cut-off current VCE=1500V; VBE=0 Tj=125℃ 1 2 mA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=5V 10 hFE-2 DC current gain IC=7A ; VCE=5V 8 16 Switching times ts Storage time 2.1 3.1 μs 140 210 ns IC=7A;IB1=1.5A;IB2=3.5A; VCC=400V tf Fall time 2 Inchange Semiconductor Product Specification BUH715AF Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.30mm) 3