isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUW41/A/B DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min)- BUW41 = 350V(Min)- BUW41A = 400V(Min)- BUW41B ·High Switching Speed ·High Power Dissipation APPLICATIONS ·Designed for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEO(SUS) VEBO PARAMETER Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VALUE BUW41 450 BUW41A 550 BUW41B 650 BUW41 300 BUW41A 350 BUW41B 400 UNIT V V Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUW41/A/B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUW41 VCEO(SUS) Collector-Emitter Sustaining Voltage BUW41A MIN TYP. MAX UNIT 300 IC= 200mA ; IB= 0 BUW41B V 350 400 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 6 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A IC= 5A; IB= 1A,TC= 150℃ 1.0 2.0 V IC= 5A; IB= 1A 1.6 V BUW41 VCE= 450V;VBE= -1.5V VCE= 450V;VBE= -1.5V,TC= 150℃ 0.1 1.0 BUW41A VCE= 550V;VBE= -1.5V VCE= 550V;VBE= -1.5V,TC= 150℃ 0.1 1.0 BUW41B VCE= 650V;VBE= -1.5V VCE= 650V;VBE= -1.5V,TC= 150℃ 0.1 1.0 1.0 B B VBE(sat) ICEV Base-Emitter Saturation Voltage Collector Cutoff Current B IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE DC Current Gain IC= 5A ; VCE= 3V 10 Current-Gain—Bandwidth Product IC= 0.5A ;VCE= 10V 15 fT isc Website：www.iscsemi.cn 2 V mA mA MHz