isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV42A DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.9V(Max.) @IC= 4A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage VBE=-1.5V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT 400 V 300 V 7 V s c s i . w w w IC Collector Current-Continuous 12 A ICM Collector Current-Peak 18 A IB Base Current-Continuous 2.5 A IBM Base Current- Peak 4 A PC Collector Power Dissipation @TC=25℃ 120 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV42A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 0.9 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.3 V ICER Collector Cutoff Current VCE= 400V;RBE= 10Ω VCE= 400V;RBE= 10Ω;TC=100℃ 0.5 2.5 mA ICEV Collector Cutoff Current VCE= 400V;VBE= -1.5V VCE= 400V;VBE= -1.5V;TC=100℃ 0.5 2.0 mA IEBO Emitter Cutoff Current 1.0 mA isc Website：www.iscsemi.cn MAX UNIT V 7 V B n c . i m e VEB= 5V; IC= 0 TYP. 300 B s c s i . w w w MIN