ISC BUX20A

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BUX20A
DESCRIPTION
· Collector-Emitter Sustaining Voltage: VCEO(SUS) = 125V(Min)
·High Current Capability
·Good Linearity of hFE
APPLICATIONS
·Designed for switching and linear applications in military
and industrial equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VALUE
UNIT
Collector-Base Voltage
160
V
Collector-Emitter Voltage
125
V
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
40
A
ICM
Collector Current-Peak
50
A
IB
Base Current-Continuous
8
A
PC
Collector Power Dissipation
@TC=100℃
140
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
VCBO
VCEO(SUS)
VEBO
B
PARAMETER
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.7
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BUX20A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 200mA ; IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 20A; IB= 2A
0.6
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 40A; IB= 4A
1.2
V
Base-Emitter Saturation Voltage
IC= 40A; IB= 4A
2.0
V
ICEO
Collector Cutoff Current
VCE= 100V;IB= 0
3.0
mA
ICEX
Collector Cutoff Current
VCE= 160V;VBE= -1.5V
VCE= 160V;VBE= -1.5V; TC= 125℃
3.0
12
mA
IEBO
Emitter Cutoff Current
VEB= 8V; IC=0
5.0
mA
hFE-1
DC Current Gain
IC= 20A ; VCE= 2V
20
hFE-2
DC Current Gain
IC= 40A ; VCE= 4V
10
Current-Gain—Bandwidth Product
IC= 2A ; VCE= 15V; ftest= 10MHz
50
VBE(sat)
fT
isc Website:www.iscsemi.cn
CONDITIONS
2
MIN
TYP.
MAX
125
UNIT
V
60
MHz