isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX20A DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 125V(Min) ·High Current Capability ·Good Linearity of hFE APPLICATIONS ·Designed for switching and linear applications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT Collector-Base Voltage 160 V Collector-Emitter Voltage 125 V Emitter-Base Voltage 7 V IC Collector Current-Continuous 40 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 8 A PC Collector Power Dissipation @TC=100℃ 140 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ VCBO VCEO(SUS) VEBO B PARAMETER THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX20A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A 0.6 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 40A; IB= 4A 1.2 V Base-Emitter Saturation Voltage IC= 40A; IB= 4A 2.0 V ICEO Collector Cutoff Current VCE= 100V;IB= 0 3.0 mA ICEX Collector Cutoff Current VCE= 160V;VBE= -1.5V VCE= 160V;VBE= -1.5V; TC= 125℃ 3.0 12 mA IEBO Emitter Cutoff Current VEB= 8V; IC=0 5.0 mA hFE-1 DC Current Gain IC= 20A ; VCE= 2V 20 hFE-2 DC Current Gain IC= 40A ; VCE= 4V 10 Current-Gain—Bandwidth Product IC= 2A ; VCE= 15V; ftest= 10MHz 50 VBE(sat) fT isc Website：www.iscsemi.cn CONDITIONS 2 MIN TYP. MAX 125 UNIT V 60 MHz