isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX31/A/B DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUX31 = 450V (Min)-BUX31A = 450V (Min)-BUX31B ·Low Saturation Voltage APPLICATIONS ·Designed for off-line power supplies and are also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage MAX BUX31 800 BUX31A 900 BUX31B 1000 BUX31 400 BUX31A 450 BUX31B 500 UNIT V V Emitter-Base Voltage 8 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX31/A/B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUX31 VCEO(SUS) Collector-Emitter Sustaining Voltage BUX31A MIN TYP. MAX UNIT 400 IC= 0.2A ; IB= 0 BUX31B V 450 500 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2A 2.0 V Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.3 V BUX31 VCE= 800V;VBE= -1.5V VCE= 800V;VBE= -1.5V,TC=125℃ 0.1 1.0 BUX31A VCE= 900V;VBE= -1.5V VCE= 900V;VBE= -1.5V,TC=125℃ 0.1 1.0 BUX31B VCE= 1000V;VBE= -1.5V VCE= 1000V;VBE= -1.5V,TC=125℃ 0.1 1.0 VBE(sat) ICEV Collector Cutoff Current B B B IEBO Emitter Cutoff Current VEB= 8V; IC= 0 hFE DC Current Gain IC= 4A ; VCE= 3V 8 Current-Gain—Bandwidth Product IC= 0.2A ;VCE= 10V 15 fT isc Website：www.iscsemi.cn 2 mA mA MHz