isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX17/A/B/C DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 150V(Min)- BUX17 = 250V(Min)- BUX17A = 300V(Min)- BUX17B = 350V(Min)- BUX17C ·High Switching Speed ·High Power Dissipation APPLICATIONS ·Designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEO(SUS) VEBO PARAMETER Collector-Emitter Voltage VBE= -1.5V VALUE BUX17 250 BUX17A 350 BUX17B 400 BUX17C 450 BUX17 150 BUX17A 250 BUX17B 300 BUX17C 350 UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX17/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUX17 VCEO(SUS) Collector-Emitter Sustaining Voltage ICEV IEBO hFE fT V 300 BUX17C 350 Collector-Emitter Saturation Voltage UNIT 250 BUX17B VCE(sat) Collector Cutoff Current MAX IC= 200mA ; IB= 0 Emitter-Base Breakdown Voltage Base-Emitter On Voltage TYP. 150 BUX17A V(BR)EBO VBE(on) MIN IE= 1mA ; IC= 0 6 V BUX17/A IC= 10A; IB= 2A 2.0 BUX17B/C IC= 8A; IB= 1.5A 2.0 BUX17/A IC= 10A ; VCE= 3V 4 BUX17B/C IC= 8A ; VCE= 3V 3.5 BUX17 VCE= 250V;VBE= -1.5V VCE= 250V;VBE= -1.5V,TC= 150℃ 3 10 BUX17A VCE= 350V;VBE= -1.5V VCE= 350V;VBE= -1.5V,TC= 150℃ 3 10 BUX17B VCE= 400V;VBE= -1.5V VCE= 400V;VBE= -1.5V,TC= 150℃ 3 5 BUX17C VCE= 450V;VBE= -1.5V VCE= 450V;VBE= -1.5V,TC= 150℃ 3 5 V B V Emitter Cutoff Current VEB= 6V; IC=0 BUX17/A IC= 10A ; VCE= 3V BUX17B/C IC= 8A ; VCE= 3V DC Current Gain 1.0 mA mA 7 Current-Gain—Bandwidth Product isc Website：www.iscsemi.cn IC= 0.5A ;VCE= 10V 2 2.5 MHz