isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2507 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.7V(Max.)@ IC= 10A APPLICATIONS ·Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 40 A IB Base Current-Continuous 7 A IBM Base Current-Peak 14 A PC Collector Power Dissipation @ TC=25℃ 200 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 0.625 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2507 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 0.7 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA ICEO Collector Cutoff Current VCE= 320V; IB= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 10A; VCE= 2V 15 hFE-2 DC Current Gain IC= 20A; VCE= 2V 8 Current-Gain—Bandwidth Product IC= 1A; VCE= 10V fT CONDITIONS MIN TYP. MAX 400 UNIT V 20 MHz Switching times ton Turn-on Time tstg Storage Time tf IC= 10A, IB1= -IB2= 2A RL= 3Ω; VBB2= 4V Fall Time isc Website：www.iscsemi.cn 2 1.0 μs 3.0 μs 0.7 μs