QSE213/QSE214 Plastic Silicon Infrared Phototransistor Features Description ■ ■ ■ ■ ■ ■ The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic sidelooker package. NPN Silicon Phototransistor Package Type: Sidelooker Medium Reception Angle, 50° Daylight Filter Black Epoxy Package Matching Emitter: QEE213 Package Dimensions 0.060 (1.50) 0.174 (4.44) R 0.030 (0.76) 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN EMITTER 0.020 (0.51) SQ. (2X) 0.100 (2.54) Schematic Collector NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. Emitter ©2005 Fairchild Semiconductor Corporation QSE213/QSE214 Rev. 1.0.0 1 www.fairchildsemi.com QSE213/QSE214 Plastic Silicon Infrared Phototransistor May 2005 Parameter Symbol Rating Unit Operating Temperature TOPR -40 to +100 °C Storage Temperature TSTG -40 to +100 °C (Iron)(2,3,4) TSOL-I 240 for 5 sec °C Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C Collector-Emitter Voltage VCE 30 V Emitter-Collector Voltage VEC 5 V PD 100 mW Soldering Temperature Power Dissipation(1) Electrical/Optical Characteristics (TA =25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Units Peak Sensitivity λPS — 880 — nM Reception Angle Q — ±25 — Deg. ID — — 100 nA BVCEO 30 — — V Collector Emitter Dark Current VCE = 10 V, Ee = 0 Collector Emitter Breakdown IC = 1 mA Emitter Collector Breakdown IE = 100 µA On-State Collector Current Ee = 0.5 mW/cm2, VCE = 5 V Saturation Voltage VCE = 5 V(5), Ee = 0.5 mW/cm2, IC = 0.1 mA(5) Rise Time VCC = 5V, RL = 100Ω, IC = 1mA (QSE213) BVECO 5 — — V IC(ON) 0.2 — 1.50 mA (QSE214) Fall Time 1.00 — — VCE(SAT) — — 0.4 V tr — 8 — µs tf — 8 — Notes: 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. 5. λ = 950 nm GaAs. 2 QSE213/QSE214 Rev. 1.0.0 www.fairchildsemi.com QSE213/QSE214 Plastic Silicon Infrared Phototransistor Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Fig. 1 Dark Current vs. Collector Emitter Voltage Fig. 2 Radiation Diagram ID - DARK CURRENT (mA) 101 100 110° 100° 90° 80° 70° 120° 60° 130° 10-1 50° 140° 40° 150° 10-2 30° 160° 20° 170° 10-3 10° 180° 10 0 20 30 40 0° 1.0 60 50 0.8 0.6 0.4 0.2 0 0.2 0.4 0.6 0.8 1.0 VCE - COLLECTOR EMITTER VOLTAGE (V) Fig. 4 Light Current vs. Collector to Emitter Voltage 10 IL - NORMALIZED LIGHT CURRENT IL - NORMALIZED LIGHT CURRENT Fig. 3 Light Current vs. Ambient Temperature Normalized to: VCE = 5 V Ie = 0.5 mW/cm2 TA = 25˚C 1 0.1 -40 -20 0 20 40 60 80 100 10 Ie = 1 mW/cm2 1 Ie = 0.5 mW/cm2 Ie = 0.2 mW/cm2 0.1 Ie = 0.1 mW/cm2 0.01 Normalized to: VCE = 5 V Ie = 0.5 mW/cm2 TA = 25˚C 0.001 0.1 TA - AMBIENT TEMPERATURE (˚C) 1 10 VCE - COLLECTOR - EMITTER VOLTAGE (V) ID - NORMALIZED DARK CURRENT Fig. 5 Dark Current vs. Ambient Temperature 103 2 10 Normalized to: VCE = 25 V TA = 25˚C VCE = 25 V VCE = 10 V 101 100 -1 10 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) 3 QSE213/QSE214 Rev. 1.0.0 www.fairchildsemi.com QSE213/QSE214 Plastic Silicon Infrared Phototransistor Typical Performance Curves The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 4 QSE213/QSE214 Rev. 1.0.0 www.fairchildsemi.com QSE213/QSE214 Plastic Silicon Infrared Phototransistor TRADEMARKS