isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage: VCE (sat)= 3.0V(Max.)@ IC= 20A ·Complement to Type MJ11013 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 30 A ICM Collector Current-Peak 50 A IB Base Current-Continunous 1 A PC Collector Power Dissipation @TC=25℃ 200 W Tj Junction Temperature 200 ℃ -55~+200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.87 ℃/W isc Website：www.iscsemi.cn MJ11014 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ11014 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 0.2A 3.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 0.3A 4.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 20A; IB= 0.2A 3.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 30A; IB= 0.3A 5.0 V ICER Collector Cutoff Current VCE=90V; RBE=1kΩ VCE=90V; RBE=1kΩ; TC=150℃ 1.0 5.0 mA ICEO Collector Cutoff Current VCE= 50V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5.0 mA hFE-1 DC Current Gain IC= 20A, VCE= 5V 1000 hFE-2 DC Current Gain IC= 30A, VCE= 5V 200 isc Website：www.iscsemi.cn CONDITIONS MIN TYP. MAX 90 UNIT V