isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 1000 (Min) @ IC = -5A ·Collector-Emitter Breakdown VoltageV(BR)CEO= -60V(Min) ·Complement to type MJ3000 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -10 A IB Base Current -0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -55~200 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.17 ℃/W isc Website：www.iscsemi.cn MJ2500 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor MJ2500 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -50mA -4.0 V Base-Emitter On voltage IC= -5A ; VCE= -3V -3.0 V ICEO Collector Cutoff current VCE= -30V; IB= 0 -1.0 mA ICER Collector Cutoff current VCE= -60V; RBE= 1.0kΩ VCE= -60V; RBE= 1.0kΩ, TC=150℃ -1.0 -5.0 mA IEBO Emitter Cut-off current VEB= -5V; IC= 0 -2.0 mA hFE DC Current Gain IC= -5A ; VCE= -3V VBE(on) isc Website：www.iscsemi.cn CONDITIONS MIN -60 B B 2 MAX 1000 UNIT V