isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX48A DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are particulary suited for line-operated swtchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage (VBE= -1.5V) 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 4 A IBM Base Current-peak 20 A PC Collector Power Dissipation @TC=25℃ 175 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX48A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A;TC= 100℃ 1.5 2.0 V Collector-Emitter Saturation Voltage IC= 12A ;IB= 2.4A 5.0 V Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A;TC= 100℃ 1.6 1.6 V VBE(sat) UNIT 450 V 7 V B B VCE(sat)-2 MAX B B ICER Collector Cutoff Current VCE=rated VCER; RBE= 10Ω VCE=rated VCER; RBE= 10Ω;TC=125℃ 0.5 4 mA ICEX Collector Cutoff Current VCE=rated VCES; VBE(off)= 1.5V VCE=rated VCES; VBE(off)= 1.5V;TC=125℃ 0.2 2 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE DC Current Gain IC= 8A ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V,ftest= 1MHz 350 pF 0.9 μs 2.0 μs 0.4 μs 8 Switching times Resistive Load ton Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 8A ;IB1=-IB2= 1.6A; VCC= 300V; VBE(off)= 5V,Duty Cycle≤2%