isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 100 (Min) @ IC =2.5A ·Collector-Emitter Sustaining VoltageVCEO(SUS)=300V(Min) APPLICATIONS ·Developed for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 8 V IC Collector Current -Continuous 10 A PC Collector Power Dissipation@TC=25℃ 175 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn MJ3040 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor MJ3040 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=2.5A; IB=50mA 2.2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=5A; IB=400mA 2.5 V Base-Emitter On voltage IC=2.5A ; VCE=5V 2.5 V ICBO Collector Cutoff current VCE=400V; IE= 0 VCE=400V; IE= 0, TC=100℃ 1.0 5.0 mA IEBO Emitter Cut-off current VEB= 5V; IC= 0 40 mA hFE-1 DC Current Gain IC=2.5A ; VCE=5V 100 hFE-2 DC Current Gain IC=5A ; VCE=5V 25 VBE(on) isc Website：www.iscsemi.cn 2 300 UNIT V