isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2583 DESCRIPTION ·High Collector Current-IC= 5A ·Low Saturation Voltage : VCE(sat)= 0.15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain: hFE= 150~600@ IC= 1A APPLICATIONS ·Designed for audio frequency amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5.0 A ICP Collector Current-Pulse 10 A IB Base Current-Continuous 2.0 A Collector Power Dissipation @ Ta=25℃ 1.0 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 10 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2583 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 VCE(sat)-3 MAX UNIT IC= 1A; IB= 50mA 0.15 V Collector-Emitter Saturation Voltage IC= 2A; IB= 0.1A 0.25 V Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A 0.5 V Base-Emitter Saturation Voltage IC= 2A; IB= 0.1A 1.5 V ICBO Collector Cutoff Current VCB= 30V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 0.1 μA hFE-1 DC Current Gain IC= 1A ; VCE= 2V 150 hFE-2 DC Current Gain IC= 4A ; VCE= 2V 50 Current-Gain—Bandwidth Product IC= 50mA ; VCE= 10V 120 MHz Output Capacitance IE= 0 ; VCB= 10V, ftest= 1MHz 77 pF VBE(sat) fT COB isc Website：www.iscsemi.cn CONDITIONS 2 MIN TYP. 600