isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUP41 DESCRIPTION ·High Collector Current-IC= 6A ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 3A, IB= 0.1A ·High Switching Speed ·Complement to Type BUP40 B APPLICATIONS ·For audio amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s i . w VALUE UNIT w w 60 V 50 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A PC Collector Power Dissipation @ TC=25℃ 10 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg n c . i m e Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUP41 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.1A 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.1A 1.4 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 μA hFE-1 DC Current Gain IC= 1A; VCE= 2V hFE-2 DC Current Gain IC= 3A; VCE= 2V fT COB CONDITIONS MIN TYP. B B 100 n c . i m e s c s i . w 500 40 Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 120 MHz Output Capacitance IE= 0; VCB= 10V 25 pF w w isc Website：www.iscsemi.cn 2