isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD608 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 160V(Min) ·Complement to Type 2SB628 APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3.0 A Base Current-Continuous 0.3 A Collector Power Dissipation @ Ta=25℃ 1.5 IB B PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 20 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD608 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μA hFE-1 DC Current Gain IC= 5mA; VCE= 5V 25 hFE-2 DC Current Gain IC= 0.3A; VCE= 5V 40 COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 35 pF Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V 40 MHz fT PARAMETER B B hFE-2 Classifications S R Q 40-80 60-120 100-200 isc Website：www.iscsemi.cn 2 200